PART |
Description |
Maker |
BFU730F |
wideband silicon germanium RF transistor
|
NXP Semiconductors
|
BFU610F |
NPN Wideband Silicon Germanium RF Transistor
|
Philips Semiconductors NXP
|
BFU730F BFU730F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
BGA7L1N6 |
Silicon Germanium Low Noise Amplifier for LTE
|
Infineon Technologies A...
|
BGA231L7 |
Silicon Germanium GPS Low Noise Amplifier
|
Infineon Technologies AG
|
BFP740F BFP740F-15 |
Low Noise Silicon Germanium Bipolar RF Transistor
|
Infineon Technologies A...
|
RQG1001UPAQF RQG1001UP-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
RENESAS[Renesas Electronics Corporation]
|
SGL-0163 |
800-1000 MHz low noise amplifier 50 Ohm, silicon germanium 800-1000 MHZ LOW NOISE AMPLIFIER 50 OHM SILICON GERMANIUM
|
Stanford Microdevices Electronic Theatre Controls, Inc. ETC List of Unclassifed Manufacturers
|
SGL-0263 SGL-0263Z |
1400 - 2500 MHz Silicon Germanium Cascadable Low Noise Amplifier
|
SIRENZA[SIRENZA MICRODEVICES]
|
BGA622L7 |
Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection
|
Infineon Technologies AG
|